The P layer above is known as the body of IGBT. Its thickness is proportional to voltage blocking capacity. While the N- layer is called the drift region. The base P+ layer inject holes into N- layer that is why it is called injector layer. The emitter is directly attached to the N+ region while the gate is insulated using a silicon dioxide layer. The emitter and gate are metal electrodes. N+ regions are diffused over the P region as shown in the figure. The P region is designed in such a way to leave a path in the middle for the gate (G) electrode. Two P regions are fabricated on top of N- layer to form PN junction J2. An N- layer is placed on top of it to form PN junction J1. A P+ substrate is used for the construction of IGBT. The collector (C) electrode is attached to P layer while the emitter (E) is attached between the P and N layers. IGBT is made of four layers of semiconductor to form a PNPN structure. TRIAC – Construction, Working and Applications.DIAC – Construction, Working and Applications. ![]() Gate terminal as it is the input part, taken from MOSFET while the collector and emitter as they are the output, taken from the BJT. ![]() The terminal’s name also implies being taken from both transistors. It has three terminals Gate (G), Collector(C) and Emitter (E). It is a four-layer PNPN device having three PN junctions.
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